![]() ![]() The fabricated sensor showed an enhanced relative sensing response in the range of 40.5–56.7% for 1–100 ppm NO 2 gas with complete recovery to 1 ppm NO 2 concentration under room-temperature conditions (25ᵒC) without applying any external thermal or optical stimuli. The electrical characterisations of MoS 2 functionalized AlGaN/GaN HEMTs are then used to detect the presence of NO 2 gas. MoS 2 structures with vertically aligned flower-like structure were synthesised using a simple hydrothermal technique and applied to the gate region of AlGaN/GaN HEMTs. ![]() In this context, we have fabricated AlGaN/GaN high electron mobility transistors (HEMTs) based sensors incorporating molybdenum disulphide (MoS 2) functionalization for very sensitive, selective, and quick measurement of even trace amounts of hazardous NO 2 gas in the ambient under room-temperature conditions. The ability to monitor toxic gases under room-temperature conditions, with enhanced response and selectivity present in the atmosphere, is still considered as a technical challenge. ![]()
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